Sputter Targets

Improved Joint Strength and Sputtering Performance

S-Bond® active solders enable the dissimilar materials bonding and ceramic metal bonding to each other and to other metals, making an S-Bond solution very suitable for bonding sputter targets. S-Bond filler metal alloys produce reliable joints with copper, aluminum, steel, stainless steels, titanium, chromium, nickel alloys, refractory metal alloys and many ceramics including alumina, zirconia, AlN, and SiC.  S-Bond alloys also join to most semiconductors including Si, GaAs, CIGS, and others.  S-Bond 220 used in these applications offers much higher operating temperatures, up to 190°C, compared to indium soldering techniques which are only good to 130 C in service. S-Bond joints are nearly void free and offer excellent strengths and thermal contact.

S-Bond solders have also been proven to work very well in the conjunction with the Nano-Bond® process using the NanoFoils® from Indium Corp. S-Bond solders are used for ceramic metal bonding of sputtering target surfaces using an inserted Nano-Foil heats up the interface to make a nearly void free joint and no thermal expansion mismatch related damage to sensitive target materials since the process only heats the interface. See our Blog for more on this Nano-Foil technology and related applications and processes. S-Bond joins… 
  • Directly, without the use of flux.
  • Without pre-plating steps, eliminating multiple-step coating processes.
  • At temperatures below 400ºC, preventing the distortion and softening of metals and also preventing ceramic fractures.

The joints produced by S-Bond active solders are:

  • Strong (> 5,000 psi shear).
  • Ductile, based on Sn-Ag or Sn-In alloys.
  • Capable of service temperatures up to 190ºC.

S-Bond® active solder joining eliminates the need for flux and preplating while offering the capability to directly bond to ceramic and semiconductor materials. S-Bond® simplifies the joining of many of the typical sputter target geometries. The joining materials are Pb-free and their temperature capabilities exceed that of Indium. For example, S-Bond 220 and 220M joined sputter targets interfaces have shear strengths of 3 – 5,000 psi (20-32 MPa) and can be taken to 195ºC without significant lowering of the room temperature values.

S-Bond Materials for Sputter Target Joining

S-Bond AlloyTm (ºC)TserviceJoint Strength(to copper, psi)
115 (In-Sn-Ag)1201002 – 3,000
130 (In-Sn-Ag)1351202-3,000
140 (Sn-Bi-Ag)1501353-4,000
220 (Sn-Ag)2351955-6,000
220M (Sn-Ag)2351955-6,000


GermaniumStainless Steel

Semiconductors / Compounds / Ceramics

SiliconIndium Zinc Gallium Oxide
Gallium ArsenideAluminum Oxide & Zirconium Oxides
Zinc SulfideMost other Metal Oxides
Silicon DioxideTitanium Carbide & Silicon Carbide
Indium Tin Oxide (ITO)Copper Indium Gallium (Di)Selenide (CIGS)
Al – Zinc Oxide (AZO)Cadmium Telluride

Contact Us for a demonstration of S-Bond’s unique capability to meet many of your sputter target joining requirements. We also have an informative bulletin about S-Bond and Sputter Targets.

More Information?

If you would like someone to contact you or provide information, please submit the information to the right.